SEMICONDUCTOR MEMORY DEVICE AND MANUFACTURING METHOD THEREOF

Organization Name

Inventor(s)

Nam Jae Lee of Icheon-si Gyeonggi-do (KR)

SEMICONDUCTOR MEMORY DEVICE AND MANUFACTURING METHOD THEREOF - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240282365 titled 'SEMICONDUCTOR MEMORY DEVICE AND MANUFACTURING METHOD THEREOF

The semiconductor memory device described in the abstract includes a unique structure with multiple layers and patterns to enhance performance and efficiency.

Source layer
Channel structure extending from within the source layer
Source-channel contact layer surrounding the channel structure
First select gate layer overlapping with the source-channel contact layer
Stack with interlayer insulating layers and conductive patterns
First insulating pattern thicker between the first select gate layer and the channel structure

Key Features and Innovation:

Complex layering and patterning for improved memory device functionality
Enhanced performance and efficiency through optimized design
Specific placement of layers and patterns to maximize effectiveness

Potential Applications:

Semiconductor memory devices
Electronics manufacturing
Memory storage solutions

Problems Solved:

Enhancing memory device performance
Improving efficiency in semiconductor technology
Optimizing design for better functionality

Benefits:

Faster data processing
Increased storage capacity
Enhanced overall performance of electronic devices

Commercial Applications:

Memory chips for computers and smartphones
Data storage devices
Semiconductor manufacturing industry

Prior Art:

Researchers and engineers in the semiconductor field
Patent databases for similar memory device structures

Frequently Updated Research:

Advancements in semiconductor technology
New developments in memory device design

Questions about Semiconductor Memory Device: 1. How does the unique layering and patterning of this memory device improve its performance? 2. What specific advantages does the first insulating pattern provide in this semiconductor memory device design?

Original Abstract Submitted

there are provided a semiconductor memory device and a manufacturing method thereof. the semiconductor memory device includes: a source layer; a channel structure extending in a first direction from within the source layer; a source-channel contact layer surrounding the channel structure on the source layer; a first select gate layer overlapping with the source-channel contact layer and surrounding the channel structure; a stack including interlayer insulating layers and conductive patterns that are alternately stacked in the first direction and surrounding the channel structure, the stack overlapping with the first select gate layer; and a first insulating pattern that is formed thicker between the first select gate layer and the channel structure than between the stack and the channel structure.