SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE

Organization Name

sk hynix inc.

Inventor(s)

Rho Gyu Kwak of Icheon-si Gyeonggi-do (KR)

Jung Shik Jang of Icheon-si Gyeonggi-do (KR)

In Su Park of Icheon-si Gyeonggi-do (KR)

Seok Min Choi of Icheon-si Gyeonggi-do (KR)

Won Geun Choi of Icheon-si Gyeonggi-do (KR)

Jung Dal Choi of Icheon-si Gyeonggi-do (KR)

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240268114 titled 'SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE

The semiconductor device described in the abstract features a complex structure with multiple layers and patterns for memory and passivation.

The device includes a first gate structure with alternating conductive and insulating layers.
An isolation insulating layer within the gate structure has protrusions extending in different directions.
First memory patterns surround the protrusions, while first passivation patterns are located between the line portion and the memory patterns.

Potential Applications:

This technology can be used in the development of advanced semiconductor devices for various electronic applications.
It may find applications in memory storage devices, processors, and other integrated circuits.

Problems Solved:

The technology addresses the need for efficient isolation and organization of components within semiconductor devices.
It helps improve the performance and reliability of electronic devices by optimizing the layout and structure.

Benefits:

Enhanced functionality and performance of semiconductor devices.
Improved efficiency and reliability of electronic systems.
Potential for increased integration and miniaturization of electronic components.

Commercial Applications:

This technology has significant commercial potential in the semiconductor industry for the development of advanced electronic devices.
It can be utilized by semiconductor manufacturers to create innovative products with improved performance and functionality.

Questions about the technology: 1. How does the structure of the semiconductor device impact its overall performance? 2. What are the specific advantages of using memory patterns and passivation patterns in the device design?

Frequently Updated Research: Ongoing research in semiconductor materials and device structures may lead to further advancements in the field, potentially impacting the development of similar technologies.

Original Abstract Submitted

a semiconductor device includes a first gate structure including a plurality of first conductive layers and a plurality of first insulating layers that are alternately stacked; an isolation insulating layer located in the first gate structure, the isolation insulating layer including a first line portion extending in a first direction, a plurality of first protrusions protruding from the first line portion towards one side of the first line portion in a second direction, and a plurality of second protrusions protruding from the first line portion towards another side of the first line portion in an opposite direction to the first protrusions, wherein the second direction is orthogonal to the first direction; a plurality of first memory patterns, wherein one of the plurality of first memory patterns surrounds one of the plurality of first protrusions; and a plurality of first passivation patterns, wherein one of the plurality of first passivation patterns is located between the first line portion and one of the plurality of first memory patterns.