Sk hynix inc. (20240251569). SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME simplified abstract
SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME
Organization Name
Inventor(s)
Young Cheol Song of Icheon (KR)
SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240251569 titled 'SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME
The semiconductor device described in the patent application consists of a substrate with multiple memory cells positioned above it. Each memory cell has a multi-layer structure that includes a memory pattern.
- The device also includes a sealing layer pattern that fills the lower portion of the space between the memory cells, below the bottom surface of the memory pattern.
- A liner layer pattern is formed along the surface of the upper portion of the space to partially fill it.
- A dielectric layer pattern fills the remaining portion of the space that is not filled by the sealing layer pattern and the liner layer pattern.
Potential Applications: - This technology can be used in the development of advanced semiconductor memory devices. - It may find applications in high-performance computing systems and data storage solutions.
Problems Solved: - This innovation addresses the need for efficient memory cell structures in semiconductor devices. - It helps in improving the performance and reliability of memory cells.
Benefits: - Enhanced memory cell structure for improved functionality. - Increased efficiency and reliability in semiconductor devices.
Commercial Applications: Title: Advanced Semiconductor Memory Devices for High-Performance Computing This technology can be utilized in the production of high-speed memory modules for servers, supercomputers, and other data-intensive applications. The market implications include improved data processing speeds and enhanced overall system performance.
Prior Art: Researchers can explore prior patents related to semiconductor memory devices and multi-layer structures to understand the evolution of this technology.
Frequently Updated Research: Researchers are constantly working on enhancing the design and performance of semiconductor memory devices. Stay updated on the latest advancements in multi-layer memory cell structures for improved efficiency and reliability.
Questions about Semiconductor Memory Devices: 1. How does the multi-layer structure of memory cells impact the overall performance of semiconductor devices? 2. What are the key challenges in implementing advanced memory cell structures in high-performance computing systems?
Original Abstract Submitted
a semiconductor device includes: a substrate; a plurality of memory cells positioned over the substrate, each of the plurality of memory cells having a multi-layer structure including a memory pattern; a sealing layer pattern filling a lower portion of a space between the memory cells, the lower portion being positioned below a bottom surface of the memory pattern; a liner layer pattern formed along a surface of an upper portion of the space to partially fill the upper portion; and a dielectric layer pattern filling a remaining portion of the space unfilled by the sealing layer pattern and the liner layer pattern.
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