Shin-etsu chemical co., ltd. (20240337938). RESIST COMPOSITION AND PATTERN FORMING PROCESS simplified abstract
RESIST COMPOSITION AND PATTERN FORMING PROCESS
Organization Name
Inventor(s)
Jun Hatakeyama of Joetsu-shi (JP)
Takayuki Fujiwara of Joetsu-shi (JP)
RESIST COMPOSITION AND PATTERN FORMING PROCESS - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240337938 titled 'RESIST COMPOSITION AND PATTERN FORMING PROCESS
Simplified Explanation: The patent application describes a resist composition that includes a base polymer with repeat units containing a salt structure with a sulfonic acid anion bonded to a polymer backbone and a sulfonium cation.
- The resist composition includes a base polymer with a unique salt structure.
- The salt structure consists of a sulfonic acid anion and a sulfonium cation.
- The composition is designed for use in resist materials for lithography processes.
- The sulfonium cation in the composition enhances the resist properties.
- The patent application aims to improve the performance of resist materials in semiconductor manufacturing processes.
Potential Applications: The technology can be applied in the semiconductor industry for lithography processes to create intricate patterns on substrates.
Problems Solved: The technology addresses the need for improved resist materials with enhanced performance and stability in semiconductor manufacturing processes.
Benefits: The resist composition offers improved resist properties, leading to better pattern formation and overall performance in lithography processes.
Commercial Applications: The technology can be utilized by semiconductor manufacturers to enhance the quality and efficiency of their lithography processes, potentially leading to cost savings and improved product quality.
Questions about the Technology: 1. How does the unique salt structure in the resist composition contribute to its performance? 2. What specific advantages does the sulfonium cation provide in the resist material?
Original Abstract Submitted
a resist composition comprising a base polymer containing repeat units (a) having a salt structure containing a sulfonic acid anion bonded to a polymer backbone and a sulfonium cation having formula (1).