Semiconductor energy laboratory co., ltd. (20250149446). SEMICONDUCTOR DEVICE
SEMICONDUCTOR DEVICE
Organization Name
semiconductor energy laboratory co., ltd.
Inventor(s)
Takanori Matsuzaki of Atsugi JP
SEMICONDUCTOR DEVICE
This abstract first appeared for US patent application 20250149446 titled 'SEMICONDUCTOR DEVICE
Original Abstract Submitted
a semiconductor device with large memory capacity, a semiconductor device which can be miniaturized or highly integrated, a highly reliable semiconductor device, a semiconductor device with low power consumption, or a semiconductor device with high operating speed is provided. a first insulating layer, a second conductive layer, a second insulating layer, and a third conductive layer are provided over a first conductive layer in this order and each include an opening portion reaching the first conductive layer. in the opening portion of the second conductive layer, a third insulating layer, a first charge-accumulation layer, a fourth insulating layer, an oxide semiconductor layer, a fifth insulating layer, a second charge-accumulation layer, a sixth insulating layer, and a fourth conductive layer are provided in this order from a sidewall of the opening portion. the first conductive layer and the third conductive layer function as a source electrode or a drain electrode of a transistor. the fourth conductive layer functions as a first control gate. the second conductive layer functions as a second control gate.