Semiconductor energy laboratory co., ltd. (20250120182). SEMICONDUCTOR DEVICE
SEMICONDUCTOR DEVICE
Organization Name
semiconductor energy laboratory co., ltd.
Inventor(s)
Shunpei Yamazaki of Setagaya JP
Hitoshi Kunitake of Machida JP
SEMICONDUCTOR DEVICE
This abstract first appeared for US patent application 20250120182 titled 'SEMICONDUCTOR DEVICE
Original Abstract Submitted
a semiconductor device that can be scaled down or highly integrated is to be provided. the semiconductor device includes a first conductor, a second conductor, a first insulator, a first transistor over the first insulator, and a second insulator over the first transistor. the first transistor includes a first metal oxide, a third conductor and a fourth conductor electrically connected to the first metal oxide, a third insulator over the first metal oxide, and a fifth conductor over the third insulator. the top surface of the fifth conductor includes a region in contact with the second insulator. the first conductor includes a portion positioned on an inner side of an opening of the first insulator, a region in contact with the side surface of the third conductor, and a portion positioned on an inner side of an opening of the second insulator. the second conductor includes a region in contact with the top surface of the fourth conductor, and a portion positioned on an inner side of an opening of the second insulator. the top surface of the first conductor is level or substantially level with the top surface of the second conductor.