Semiconductor energy laboratory co., ltd. (20250015194). Semiconductor Device
Semiconductor Device
Organization Name
semiconductor energy laboratory co., ltd.
Inventor(s)
Shunpei Yamazaki of Tokyo (JP)
Tsutomu Murakawa of Isehara (JP)
Hitoshi Kunitake of Tokyo (JP)
Yasuhiro Jinbo of Isehara (JP)
Semiconductor Device
This abstract first appeared for US patent application 20250015194 titled 'Semiconductor Device
Original Abstract Submitted
a transistor that can be miniaturized is provided. the semiconductor device includes an oxide semiconductor layer, first to fourth conductive layers, and first to fourth insulating layers. over the first conductive layer including a depressed portion, the first insulating layer, the second conductive layer, the second insulating layer, and the third conductive layer which include a first opening portion overlapping with the depressed portion are provided in this order. the third insulating layer is in contact with at least the side surface of the second conductive layer in the first opening portion. the oxide semiconductor layer is in contact with the top surface of the third conductive layer and the bottom and side surfaces of the depressed portion, and is in contact with the third insulating layer in the first opening portion. the fourth insulating layer is on an inner side of the oxide semiconductor layer in the first opening portion. the fourth conductive layer is on an inner side of the fourth insulating layer in the first opening portion. in a cross-sectional view, the oxide semiconductor layer includes a region overlapping with the second conductive layer with the third insulating layer therebetween and overlapping with the fourth conductive layer with the fourth insulating layer therebetween.