Samsung electronics co., ltd. (20250151627). METHOD OF MANUFACTURING MAGNETORESISTIVE RANDOM ACCESS MEMORY DEVICE
METHOD OF MANUFACTURING MAGNETORESISTIVE RANDOM ACCESS MEMORY DEVICE
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METHOD OF MANUFACTURING MAGNETORESISTIVE RANDOM ACCESS MEMORY DEVICE
This abstract first appeared for US patent application 20250151627 titled 'METHOD OF MANUFACTURING MAGNETORESISTIVE RANDOM ACCESS MEMORY DEVICE
Original Abstract Submitted
a method of manufacturing a magnetoresistive memory device includes: forming, sequentially, a magnetic tunnel junction (mtj) structure and a metal layer on a substrate in first and second cell regions; performing a first oxidation process on the metal layer in the first and second cell regions to form a first metal oxide layer; performing an ion implantation process on the first metal oxide layer in the first cell region to form a second metal oxide layer while the first metal oxide layer is exposed in the second cell region; and patterning the mtj structure, the first and second metal oxide layers to form a first memory element including a first mtj structure and the second metal oxide layer in the first cell region, and to form a second memory element including a second mtj structure and the first metal oxide layer in the second cell region.