Samsung electronics co., ltd. (20250151382). SEMICONDUCTOR DEVICE
SEMICONDUCTOR DEVICE
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SEMICONDUCTOR DEVICE
This abstract first appeared for US patent application 20250151382 titled 'SEMICONDUCTOR DEVICE
Original Abstract Submitted
a semiconductor device includes a first gate isolation structure. a second gate isolation structure is spaced apart from the first gate isolation structure in a first direction. a first active pattern is disposed between the first and second gate isolation structures. the first active pattern extends longitudinally in a second direction crossing the first direction. a second active pattern is disposed between the first and second gate isolation structures. the second active pattern extends longitudinally in the second direction and is spaced apart from the first active pattern in the first direction. gate structures are disposed between the first and second gate isolation structures. the gate structures directly contact the first and second gate isolation structures. a length of the first gate isolation structure in the second direction is greater than a length of the second gate isolation structure in the second direction.