Samsung electronics co., ltd. (20250142945). SEMICONDUCTOR DEVICE AND INTEGRATED CIRCUIT INCLUDING THE SAME
SEMICONDUCTOR DEVICE AND INTEGRATED CIRCUIT INCLUDING THE SAME
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SEMICONDUCTOR DEVICE AND INTEGRATED CIRCUIT INCLUDING THE SAME
This abstract first appeared for US patent application 20250142945 titled 'SEMICONDUCTOR DEVICE AND INTEGRATED CIRCUIT INCLUDING THE SAME
Original Abstract Submitted
a semiconductor device may include a diode pattern including a first conductive region and a second conductive region having opposite conductivity types to each other on a base insulating layer, an insulating layer covering the diode pattern on the base insulating layer, a wiring portion on the insulating layer; and a through connector extending through the insulating layer at a periphery of the diode pattern to electrically connect the diode pattern and the wiring portion.