SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

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SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

This abstract first appeared for US patent application 20250142894 titled 'SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

Original Abstract Submitted

a semiconductor device may include a two-dimensional (2d) material layer extending in a first direction, a source electrode and a drain electrode each electrically connected to the 2d material layer, an insulating layer arranged on the 2d material layer, and a gate electrode arranged apart from the 2d material layer in a second direction perpendicular to the first direction, wherein the insulating layer includes a dopant.