Samsung electronics co., ltd. (20250142850). INTEGRATED CIRCUIT DEVICE
INTEGRATED CIRCUIT DEVICE
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INTEGRATED CIRCUIT DEVICE
This abstract first appeared for US patent application 20250142850 titled 'INTEGRATED CIRCUIT DEVICE
Original Abstract Submitted
provided is an integrated circuit device including a lower electrode, a dielectric layer on the lower electrode, an upper electrode facing the lower electrode with the dielectric layer therebetween, and an interfacial structure between the dielectric layer and the upper electrode, wherein the interfacial structure includes a first interfacial layer and a second interfacial layer, and a high band gap interfacial layer between the first interfacial layer and the second interfacial layer, wherein a third band gap of the high band gap interfacial layer is greater than a first band gap of the first interfacial layer and is greater than a second band gap of the second interfacial layer.