Samsung electronics co., ltd. (20250142813). SEMICONDUCTOR MEMORY DEVICE
SEMICONDUCTOR MEMORY DEVICE
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SEMICONDUCTOR MEMORY DEVICE
This abstract first appeared for US patent application 20250142813 titled 'SEMICONDUCTOR MEMORY DEVICE
Original Abstract Submitted
a semiconductor memory device includes a substrate including a cell area and a peripheral area defined around the cell area, a peripheral gate on the peripheral area and including a peripheral gate conductive film, peripheral wiring lines on the peripheral gate, peripheral wiring capping films respectively in contact with the peripheral wiring lines, wherein each peripheral wiring capping film includes upper and lower surfaces, and a peripheral wiring isolation pattern isolating adjacent peripheral wiring lines, and contacting a sidewall of the peripheral wiring lines, wherein the lower surface of each peripheral wiring capping film faces the substrate and contacts an upper surface of the peripheral wiring extension line, wherein a height from an upper surface of the substrate to the upper surface of each peripheral wiring extension line is smaller than a height from the upper surface of the substrate to an upper surface of the peripheral wiring isolation pattern.