Samsung electronics co., ltd. (20250142806). SEMICONDUCTOR MEMORY DEVICE
SEMICONDUCTOR MEMORY DEVICE
Organization Name
Inventor(s)
Hyeoungwon Seo of Yongin-si KR
SEMICONDUCTOR MEMORY DEVICE
This abstract first appeared for US patent application 20250142806 titled 'SEMICONDUCTOR MEMORY DEVICE
Original Abstract Submitted
a semiconductor memory device includes a word line extending in a vertical direction, a semiconductor pattern having a ring-shaped horizontal cross-section that extends around the word line, a bit line at a first end of the semiconductor pattern, and a capacitor structure at second end of the semiconductor pattern. the capacitor structure includes a lower electrode layer electrically connected to the second end of the semiconductor pattern, having a ring-shaped horizontal cross-section, and including a connector extending in the vertical direction. a first segment extends in a horizontal direction from an upper end of the connector, and a second segment extends in the horizontal direction from a lower end of the connector. an upper electrode layer surrounded by the lower electrode layer, extends in the vertical direction, and a capacitor dielectric layer is between the lower electrode layer and the upper electrode layer.