Samsung electronics co., ltd. (20250133791). INTEGRATED CIRCUIT DEVICE
INTEGRATED CIRCUIT DEVICE
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INTEGRATED CIRCUIT DEVICE
This abstract first appeared for US patent application 20250133791 titled 'INTEGRATED CIRCUIT DEVICE
Original Abstract Submitted
an integrated circuit device includes a first fin-type active region and a second fin-type active region, each extending on a substrate in a first horizontal direction, a plurality of gate lines on the first fin-type active region and second fin-type active region, the plurality of gate lines extending in a second horizontal direction that crosses the first horizontal direction, a first source/drain region and a second source/drain region respectively in the first fin-type active region and second fin-type active region, wherein each of the first source/drain region and the second source/drain region is disposed between the plurality of gate lines, a spacer structure disposed on the plurality of gate lines, the first source/drain region and the second source/drain region, and a protective insulating film disposed on the second source/drain region and exposing the first source/drain region.