Samsung electronics co., ltd. (20250133738). SEMICONDUCTOR DEVICE AND ELECTRONIC SYSTEM INCLUDING THE SAME
SEMICONDUCTOR DEVICE AND ELECTRONIC SYSTEM INCLUDING THE SAME
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SEMICONDUCTOR DEVICE AND ELECTRONIC SYSTEM INCLUDING THE SAME
This abstract first appeared for US patent application 20250133738 titled 'SEMICONDUCTOR DEVICE AND ELECTRONIC SYSTEM INCLUDING THE SAME
Original Abstract Submitted
a semiconductor device includes a gate stack with alternating conductive patterns and insulating patterns. the device also includes a first memory channel structure including a first channel layer enclosed by the gate stack and a first memory layer enclosing the first channel layer. the device also includes a source structure electrically connected to the first channel layer. the source structure includes several source layers stacked atop one another. the first channel layer is in physical contact with the second source layer but apart from the other source layers. the first source layer contains impurities of a first conductivity type. the second source layer is formed of an impurity-free material. the third source layer contains impurities of a second conductivity type different from the first conductivity type.
- Samsung electronics co., ltd.
- Chulmin Choi of Suwon-si KR
- Changhee Lee of Suwon-si KR
- Dajin Kim of Suwon-si KR
- Jiwoong Kim of Suwon-si KR
- Tae Hun Kim of Suwon-si KR
- Sang-Yong Park of Suwon-si KR
- Seung Jae Baik of Suwon-si KR
- Gun-Wook Yoon of Suwon-si KR
- Jaeduk Lee of Suwon-si KR
- H10B43/27
- H01L25/065
- H10B41/10
- H10B41/27
- H10B41/35
- H10B41/41
- H10B43/10
- H10B43/35
- H10B43/40
- H10B80/00
- CPC H10B43/27