SEMICONDUCTOR DEVICES AND METHODS OF FABRICATING THE SAME

Organization Name

Inventor(s)

SEMICONDUCTOR DEVICES AND METHODS OF FABRICATING THE SAME

This abstract first appeared for US patent application 20250133731 titled 'SEMICONDUCTOR DEVICES AND METHODS OF FABRICATING THE SAME

Original Abstract Submitted

a semiconductor device includes a first interlayer insulating layer on a substrate and including an upper surface at a first level, a second interlayer insulating layer on the first interlayer insulating layer, and including a material with less density than that of the first interlayer insulating layer, a first contact in the first interlayer insulating layer and having an upper surface at a second level higher than the first level, a through via in the first interlayer insulating layer and substrate, and having an upper surface at a third level higher than the second level, a first wiring in the second interlayer insulating layer, in contact with the first contact, and having a lower surface at a fourth level lower than the first level, and a second wiring in the second interlayer insulating layer, in contact with the through via, and having a fifth level lower than the fourth level.