Samsung electronics co., ltd. (20250132253). SEMICONDUCTOR MEMORY DEVICE
SEMICONDUCTOR MEMORY DEVICE
Organization Name
Inventor(s)
SEMICONDUCTOR MEMORY DEVICE
This abstract first appeared for US patent application 20250132253 titled 'SEMICONDUCTOR MEMORY DEVICE
Original Abstract Submitted
a semiconductor memory device includes a conductive line extending in a first direction, first and second channel regions connected to the conductive line, contact plugs apart from the conductive line in a vertical direction with the first and second channel regions therebetween, a back gate electrode extending in a second direction perpendicular to the first direction between the first and second channel regions, and a back gate dielectric film covering surfaces of the back gate electrode, wherein the back gate dielectric film includes a vertical extension portion arranged between the back gate electrode and each of the first and second channel regions to cover sidewalls of the back gate electrode, and a horizontal extension portion connected integrally to the vertical extension portion and covering the back gate electrode at one position selected from a first position facing the conductive line and a second position facing the contact plugs.