Samsung electronics co., ltd. (20250132198). METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
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METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
This abstract first appeared for US patent application 20250132198 titled 'METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
Original Abstract Submitted
a method of manufacturing a semiconductor device, the method includes forming interconnection lines buried in a first interlayer insulating layer, the interconnection lines having exposed upper surfaces, selectively forming a preliminary low dielectric constant layer including a polymer containing silicon (si) or an oligomer containing silicon (si) on an upper surface of the first interlayer insulating layer, forming a low dielectric constant layer by performing ultraviolet (uv) and ozone (o) treatments on the preliminary low dielectric constant layer, forming an etch stop layer on the low dielectric constant layer, forming a second interlayer insulating layer on the etch stop layer, and forming a via connected to at least one of the interconnection lines by removing a portion of the second interlayer insulating layer and depositing a conductive material. the via has a shape bent along an upper surface and a side surface of the low dielectric constant layer.