Samsung electronics co., ltd. (20250126903). IMAGE SENSOR
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IMAGE SENSOR
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IMAGE SENSOR
This abstract first appeared for US patent application 20250126903 titled 'IMAGE SENSOR
Original Abstract Submitted
an image sensor includes a first substrate. a photoelectric conversion region is in the first substrate. a first interlayer insulating layer is on the first substrate. a transistor includes a bonding insulating layer on the first interlayer insulating layer, a semiconductor layer on the bonding insulating layer, and a first gate on the semiconductor layer. a bias pad is spaced apart from the semiconductor layer by the bonding insulating layer. the bias pad overlaps the first gate in a planar view. a second interlayer insulating layer covers the transistor.