Samsung electronics co., ltd. (20250126886). SEMICONDUCTOR DEVICE INCLUDING TWO-DIMENSIONAL SEMICONDUCTOR MATERIAL
SEMICONDUCTOR DEVICE INCLUDING TWO-DIMENSIONAL SEMICONDUCTOR MATERIAL
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SEMICONDUCTOR DEVICE INCLUDING TWO-DIMENSIONAL SEMICONDUCTOR MATERIAL
This abstract first appeared for US patent application 20250126886 titled 'SEMICONDUCTOR DEVICE INCLUDING TWO-DIMENSIONAL SEMICONDUCTOR MATERIAL
Original Abstract Submitted
provided is a semiconductor device including a two-dimensional (2d) material. the semiconductor device may include a first channel including a first 2d material layer, a second channel apart from the first channel in a first direction and including a second 2d material layer, a common gate electrode between the first channel and the second channel, a first electrode and a second electrode apart from each other and respectively in contact with the first channel and the second channel, and a common electrode apart from the first electrode and the second electrode in a second direction intersecting the first direction and in contact with the first channel and the second channel. one of the first channel and the second channel may be an n-type channel and the other one may be a p-type channel.