Samsung electronics co., ltd. (20250126799). SEMICONDUCTOR DEVICE
SEMICONDUCTOR DEVICE
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SEMICONDUCTOR DEVICE
This abstract first appeared for US patent application 20250126799 titled 'SEMICONDUCTOR DEVICE
Original Abstract Submitted
a semiconductor device may include a substrate containing first to third doping regions, first and second gate structures between the first and second doping regions, and a gate separation layer between the first and second gate structures. each of the first and second gate structures may include a first gate dielectric layer, a first gate conductive layer on the first gate dielectric layer, and a second gate conductive layer between the gate separation layer and the first gate conductive layer. the gate separation layer may include a first sidewall in contact with the first gate structure and a second sidewall in contact with the second gate structure. a top surface of the gate separation layer may be at a same level as a top surface of the second gate conductive layer.