Samsung electronics co., ltd. (20250126771). METHOD OF MANUFACTURING SEMICONDUCTOR MEMORY DEVICE
METHOD OF MANUFACTURING SEMICONDUCTOR MEMORY DEVICE
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METHOD OF MANUFACTURING SEMICONDUCTOR MEMORY DEVICE
This abstract first appeared for US patent application 20250126771 titled 'METHOD OF MANUFACTURING SEMICONDUCTOR MEMORY DEVICE
Original Abstract Submitted
a method of manufacturing a semiconductor memory device includes forming a metal seed pattern having a plurality of openings on a substrate, forming a metal silicide pattern from the substrate and the metal seed pattern, growing a single crystal semiconductor pattern in a vertical direction at an interface between the substrate and the metal silicide pattern where the vertical direction is perpendicular to the substrate, and growing a sacrificial semiconductor pattern in the vertical direction at an interface between the metal silicide pattern and the single crystal semiconductor pattern.