Samsung electronics co., ltd. (20250118370). NON-VOLATILE MEMORY DEVICE AND PROGRAMMING METHOD THEREOF
NON-VOLATILE MEMORY DEVICE AND PROGRAMMING METHOD THEREOF
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NON-VOLATILE MEMORY DEVICE AND PROGRAMMING METHOD THEREOF
This abstract first appeared for US patent application 20250118370 titled 'NON-VOLATILE MEMORY DEVICE AND PROGRAMMING METHOD THEREOF
Original Abstract Submitted
a non-volatile memory device includes: a memory cell array including a plurality of memory cells connected to a plurality of word lines and a plurality of bit lines, a row decoder configured to selectively control the plurality of word lines, a page buffer including a plurality of latches corresponding to the plurality of bit lines, respectively, and a control circuit configured to control the non-volatile memory device to enter a suspend state after terminating a verify operation of a program loop of a program operation of the plurality of memory cells in response to a suspend request being generated during an execution operation of the program loop.