Samsung electronics co., ltd. (20250113590). SEMICONDUCTOR DEVICES INCLUDING SEMICONDUCTOR PATTERN
SEMICONDUCTOR DEVICES INCLUDING SEMICONDUCTOR PATTERN
Organization Name
Inventor(s)
SEMICONDUCTOR DEVICES INCLUDING SEMICONDUCTOR PATTERN
This abstract first appeared for US patent application 20250113590 titled 'SEMICONDUCTOR DEVICES INCLUDING SEMICONDUCTOR PATTERN
Original Abstract Submitted
a semiconductor device includes a first conductive line and a second conductive line spaced apart from the first conductive line. a semiconductor pattern is disposed between the first conductive line and the second conductive line. the semiconductor pattern includes a first semiconductor pattern having first-conductivity-type impurities disposed adjacent to the first conductive line. a second semiconductor pattern having second-conductivity-type impurities is disposed adjacent to the second conductive line. a third semiconductor pattern is disposed between the first semiconductor pattern and the second semiconductor pattern. the third semiconductor pattern includes a first region disposed adjacent to the first semiconductor pattern and a second region disposed between the first region and the second semiconductor pattern. at least one of the first region and the second region comprises an intrinsic semiconductor layer. a first gate line crosses the first region and a second gate line crosses the second region.