Samsung electronics co., ltd. (20250107201). SELECTIVE SINGLE DIFFUSION/ELECTRICAL BARRIER
SELECTIVE SINGLE DIFFUSION/ELECTRICAL BARRIER
Organization Name
Inventor(s)
Byounghak Hong of Albany NY US
Seunghyun Song of Albany NY US
Jason Martineau of Milpitas CA US
SELECTIVE SINGLE DIFFUSION/ELECTRICAL BARRIER
This abstract first appeared for US patent application 20250107201 titled 'SELECTIVE SINGLE DIFFUSION/ELECTRICAL BARRIER
Original Abstract Submitted
presented are structures and methods for forming such structures that allow for electrical or diffusion breaks between transistors of one level of a stacked transistor device, without necessarily requiring that a like electrical or diffusion break exists in another level of the stacked transistor device. also presented, an electrical break between transistor devices may be formed by providing a channel of a first polarity with a false gate comprising a work-function metal of an opposite polarity.