Samsung electronics co., ltd. (20250107102). SEMICONDUCTOR DEVICE
SEMICONDUCTOR DEVICE
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SEMICONDUCTOR DEVICE
This abstract first appeared for US patent application 20250107102 titled 'SEMICONDUCTOR DEVICE
Original Abstract Submitted
a semiconductor device includes a substrate including a cell region and a peripheral region, a first lower insulating layer disposed on the cell region and extending onto the peripheral region, a second lower insulating layer disposed on the first lower insulating layer on the cell region and extending onto the first lower insulating layer on the peripheral region, data storage patterns disposed on the second lower insulating layer on the cell region, a cell insulating layer disposed on the second lower insulating layer on the cell region and covering the data storage patterns, and a peripheral insulating layer disposed on the second lower insulating layer on the peripheral region and including a material different from the cell insulating layer. a thickness of the second lower insulating layer on the peripheral region is smaller than a maximum thickness of the second lower insulating layer on the cell region.