SEMICONDUCTOR PACKAGE HAVING DIELECTRIC LAYER WITH STEP DIFFERENCE

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SEMICONDUCTOR PACKAGE HAVING DIELECTRIC LAYER WITH STEP DIFFERENCE

This abstract first appeared for US patent application 20250096208 titled 'SEMICONDUCTOR PACKAGE HAVING DIELECTRIC LAYER WITH STEP DIFFERENCE

Original Abstract Submitted

a semiconductor package includes a first semiconductor chip having first and second surfaces opposing each other; first lower electrode pads on the first surface; a first insulating layer surrounding a side surface of each of the first lower electrode pads on the first surface; through-electrodes penetrating through at least a portion of the first semiconductor chip; first upper electrode pads on the through-electrodes; a first dielectric layer covering at least a portion of each of the first insulating layer, the first semiconductor chip, the through-electrodes, and the first upper electrode pads on the through-electrodes; where the first dielectric layer comprises a first portion and a second portion on the first portion of the first dielectric layer, and a first outer surface of the first portion is located on an inner side closer to the first semiconductor chip than a second outer surface of the second portion.