Samsung electronics co., ltd. (20250096181). SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME
SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME
Organization Name
Inventor(s)
SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME
This abstract first appeared for US patent application 20250096181 titled 'SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME
Original Abstract Submitted
disclosed are semiconductor devices and methods of fabricating the same. the method comprises providing a carrier substrate that includes a conductive layer, placing a semiconductor die on the carrier substrate, forming an insulating layer to cover the semiconductor die on the carrier substrate, forming a via hole to penetrate the insulating layer at a side of the semiconductor die and to expose the conductive layer of the carrier substrate, performing a plating process in which the conductive layer of the carrier substrate is used as a seed to form a via filling the via hole, forming a first redistribution layer on a first surface of the semiconductor die and the insulating layer, removing the carrier substrate, and forming a second redistribution layer on a second surface of the semiconductor die and the insulating layer, the first surface and the second surface being located opposite each other.
