Samsung electronics co., ltd. (20250096141). SEMICONDUCTOR MEMORY DEVICE INCLUDING WIRING CONTACT PLUGS
SEMICONDUCTOR MEMORY DEVICE INCLUDING WIRING CONTACT PLUGS
Organization Name
Inventor(s)
Sungdong Cho of Hwaseong-si KR
SEMICONDUCTOR MEMORY DEVICE INCLUDING WIRING CONTACT PLUGS
This abstract first appeared for US patent application 20250096141 titled 'SEMICONDUCTOR MEMORY DEVICE INCLUDING WIRING CONTACT PLUGS
Original Abstract Submitted
a semiconductor memory device includes a substrate including a cell area and a peripheral area, a plurality of capacitors including a plurality of lower electrodes arranged in the cell area, a plurality of capacitor dielectric layers covering the plurality of lower electrodes, and an upper electrode on the plurality of capacitor dielectric layers, an etch stop layer covering the upper electrode, a filling insulation layer covering the etch stop layer and arranged in the cell area and the peripheral area, a plurality of wiring lines on the filling insulation layer, and a first wiring contact plug electrically connecting at least one of the plurality of wiring lines to the upper electrode. the upper electrode includes a first upper electrode layer covering the plurality of capacitor dielectric layers and including a semiconductor material and a second upper electrode layer covering the first upper electrode layer and including a metallic material.