MEMORY DEVICE AND INITIALIZING METHOD THEREOF

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MEMORY DEVICE AND INITIALIZING METHOD THEREOF

This abstract first appeared for US patent application 20250095732 titled 'MEMORY DEVICE AND INITIALIZING METHOD THEREOF

Original Abstract Submitted

a memory device includes word lines, bit lines, memory cells, and a circuit. the circuit applies a first voltage to a first bit line of a target memory cell, applies a second voltage to a first word line of the target memory cell, and performs at least one of a first operation and a second operation. the first operation includes applying an adjustment voltage to a second bit line or second word line connected to an adjacent initialized memory cell, and the second operation includes applying a third voltage of an opposite polarity to the first voltage to a third bit line of a next target memory cell that is initialized after initialization of the target memory cell and applying a fourth voltage of an opposite polarity to the second voltage to a third word line of the next target memory cell.