Samsung electronics co., ltd. (20250081641). SCHOTTKY-BARRIER PHOTODETECTOR WITH GERMANIUM
SCHOTTKY-BARRIER PHOTODETECTOR WITH GERMANIUM
Organization Name
Inventor(s)
Chanwook Baik of Suwon-si (KR)
SCHOTTKY-BARRIER PHOTODETECTOR WITH GERMANIUM
This abstract first appeared for US patent application 20250081641 titled 'SCHOTTKY-BARRIER PHOTODETECTOR WITH GERMANIUM
Original Abstract Submitted
a photodetector includes a first semiconductor layer including germanium, a conductive layer that, in conjunction with the first semiconductor layer, forms a schottky junction structure, and a tunneling barrier layer positioned between the first semiconductor layer and the conductive layer and configured to prevent dark current between the first semiconductor layer and the conductive layer.