Samsung electronics co., ltd. (20250081483). INTEGRATED CIRCUIT DEVICE
INTEGRATED CIRCUIT DEVICE
Organization Name
Inventor(s)
Jongyeong Min of Suwon-si (KR)
INTEGRATED CIRCUIT DEVICE
This abstract first appeared for US patent application 20250081483 titled 'INTEGRATED CIRCUIT DEVICE
Original Abstract Submitted
an integrated circuit device includes a lower electrode, a dielectric film covering the lower electrode, an upper electrode covering the dielectric film, and a multilayered interface structure between the dielectric film and the upper electrode, wherein the multilayered interface structure includes a transition metal-aluminum (al) complex oxide layer including a transition metal oxide layer in which al atoms are dispersed, the transition metal-al complex oxide layer being in contact with the dielectric film, and an upper interface layer including a metal oxide or a metal oxynitride, the upper interface layer being in contact with the transition metal-al complex oxide layer.