Samsung electronics co., ltd. (20250081472). NON-VOLATILE MEMORY DEVICE
NON-VOLATILE MEMORY DEVICE
Organization Name
Inventor(s)
Joonyoung Kwon of Suwon-si (KR)
Junhyoung Kim of Suwon-si (KR)
NON-VOLATILE MEMORY DEVICE
This abstract first appeared for US patent application 20250081472 titled 'NON-VOLATILE MEMORY DEVICE
Original Abstract Submitted
a non-volatile memory device includes a substrate, a first semiconductor layer including a memory cell array on the substrate, a second semiconductor layer including a peripheral circuit that is configured to write data to or read the data from the memory cell array, where the second semiconductor layer is on the first semiconductor layer, and a protrusion structure including a wire that extends into at least a portion of the first semiconductor layer and at least a portion of the second semiconductor layer, where the protrusion structure extends from a first surface of the first semiconductor layer and from a first surface of the second semiconductor layer, and where the protrusion structure extends in a second direction that is perpendicular to the first direction.
