Samsung electronics co., ltd. (20250079238). METHOD OF FABRICATING A SEMICONDUCTOR DEVICE
METHOD OF FABRICATING A SEMICONDUCTOR DEVICE
Organization Name
Inventor(s)
METHOD OF FABRICATING A SEMICONDUCTOR DEVICE
This abstract first appeared for US patent application 20250079238 titled 'METHOD OF FABRICATING A SEMICONDUCTOR DEVICE
Original Abstract Submitted
a method of fabricating a semiconductor device is provided. the method includes: providing an interlayer dielectric layer with a trench on a substrate in a first substrate processing apparatus in a vacuum state; forming a first metal barrier in the trench while the substrate is in the first substrate processing apparatus; unloading the substrate from the first substrate processing apparatus and exposing the substrate to a non-vacuum environment; providing the substrate in a second substrate processing apparatus of a vacuum state; forming a second metal barrier in the trench in the second substrate processing apparatus; and forming a metal pattern to fill the trench.