Samsung electronics co., ltd. (20250072096). METHODS OF FABRICATING SEMICONDUCTOR DEVICES

METHODS OF FABRICATING SEMICONDUCTOR DEVICES

Organization Name

samsung electronics co., ltd.

Inventor(s)

Gi Woong Shim of Suwon-si (KR)

Seong Heum Choi of Suwon-si (KR)

Do Sun Lee of Suwon-si (KR)

Hyo Seok Choi of Suwon-si (KR)

Rak Hwan Kim of Suwon-si (KR)

Chung Hwan Shin of Suwon-si (KR)

METHODS OF FABRICATING SEMICONDUCTOR DEVICES

This abstract first appeared for US patent application 20250072096 titled 'METHODS OF FABRICATING SEMICONDUCTOR DEVICES

Original Abstract Submitted

a method of fabricating a semiconductor device includes: forming an active pattern on a substrate, forming a source/drain pattern on the active pattern, forming a contact hole on the source/drain pattern, forming a contact barrier layer, which has an upper surface of a first height based on a bottom surface of the contact hole, in the contact hole, forming a passivation layer on the contact barrier layer in the contact hole, forming a mask layer on the passivation layer in the contact hole, removing an upper portion of the contact barrier layer so that an upper surface of the contact barrier layer has a second height lower than the first height, removing the passivation layer and the mask layer, and forming a contact filling layer, which covers the upper surface of the contact barrier layer and fills the contact hole, in the contact hole.