Samsung electronics co., ltd. (20250072087). SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME
SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME
Organization Name
Inventor(s)
Kyungwook Park of Suwon-si (KR)
SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME
This abstract first appeared for US patent application 20250072087 titled 'SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME
Original Abstract Submitted
a semiconductor device may include first and second active patterns, each including a center portion and an edge portion, the center portion of the first active pattern and the edge portion of the second active pattern adjacent to each other, a device isolation pattern between the first and second active patterns, a bit line node contact on the center portion of the first active pattern, a bit line on the bit line node contact, a storage node contact on the edge portion of the second active pattern, a bit line spacer between the bit line and the storage node contact, and a gapfill insulating pattern between a lower portion of the bit line spacer and the storage node contact. the center portion of the first active pattern may include a center oxide region in an upper portion thereof.