SEMICONDUCTOR DEVICES AND METHODS OF FABRICATING THE SAME

Organization Name

samsung electronics co., ltd.

Inventor(s)

Ju Hun Park of Suwon-si (KR)

Jong Hyun Park of Suwon-si (KR)

Jong Lae Lee of Suwon-si (KR)

Jong Sun Lee of Suwon-si (KR)

Da Un Jeon of Suwon-si (KR)

Hyo Won Jeong of Suwon-si (KR)

Gyu Eon Cho of Suwon-si (KR)

Hyo Taek Choi of Suwon-si (KR)

Soo Yeon Hong of Suwon-si (KR)

SEMICONDUCTOR DEVICES AND METHODS OF FABRICATING THE SAME

This abstract first appeared for US patent application 20250063799 titled 'SEMICONDUCTOR DEVICES AND METHODS OF FABRICATING THE SAME

Original Abstract Submitted

a semiconductor device includes: an active pattern extending in a first direction across an underlying substrate, a gate structure extending in a second direction, on the active pattern, a first source/drain contact electrically connected to a source/drain region within the active pattern, on one side of the gate structure, and a first via pattern electrically connected to an upper surface of the first source/drain contact. a rail pattern is provided, which extends in the first direction, and is spaced apart from the first via pattern in the second direction. a wiring pattern extends in the first direction, and is electrically connected to an upper surface of the rail pattern. the first source/drain contact includes a first recess therein, which is more recessed downwardly relative to the upper surface of the first source/drain contact, and at least a portion of the first recess extends adjacent to the rail pattern.