Samsung electronics co., ltd. (20250063788). SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME
SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME
Organization Name
Inventor(s)
Chul Sung Kim of Suwon-si (KR)
Geun Hee Jeong of Suwon-si (KR)
SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME
This abstract first appeared for US patent application 20250063788 titled 'SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME
Original Abstract Submitted
the semiconductor device includes a substrate, first and second active patterns extending in a first direction, the second active pattern spaced apart from the first active pattern in a second direction different from the first direction, a gate electrode extending in the second direction, a first and second source/drain region each on one side of the gate electrode, a first and second source/drain contact each extending in the second direction on and connected to the first and second source/drain region respectively, and a contact separation layer separating the first and second source/drain contacts, the contact separation layer including a first portion and a second portion on first portion both between the first and second source/drain regions, wherein a width of the first portion of the contact separation layer in the first direction is greater than a width of the second portion of the contact separation layer in the first direction.
