Samsung electronics co., ltd. (20250061937). NONVOLATILE MEMORY DEVICE AND OPERATION METHOD THEREOF
NONVOLATILE MEMORY DEVICE AND OPERATION METHOD THEREOF
Organization Name
Inventor(s)
Su Chang Jeon of Suwon-si (KR)
Seungkyung Ro of Suwon-si (KR)
Sangkwon Moon of Suwon-si (KR)
NONVOLATILE MEMORY DEVICE AND OPERATION METHOD THEREOF
This abstract first appeared for US patent application 20250061937 titled 'NONVOLATILE MEMORY DEVICE AND OPERATION METHOD THEREOF
Original Abstract Submitted
disclosed is a nonvolatile memory device which include a memory cell array including a plurality of memory cells connected to a plurality of word lines, an address decoder that controls a selected word line among the plurality of word lines based on an address received from an external device including a first temperature sensor, a second temperature sensor that measures a read temperature of first memory cells connected to the selected word line from among the plurality of memory cells, and a temperature compensation circuit that calculates a read level offset based on the read temperature and a program temperature of the first memory cells measured by the first temperature sensor and generates a compensation read voltage based on the read level offset. the address decoder is further configured to provide the compensation read voltage to the selected word line.
