Samsung electronics co., ltd. (20250022504). MEMORY DEVICE AND OPERATION METHOD THEREOF
MEMORY DEVICE AND OPERATION METHOD THEREOF
Organization Name
Inventor(s)
YOON-JOO Eom of Hwaseong-si KR
SEUNGJUN Bae of Hwaseong-si KR
YOUNG-JU Kim of Hwaseong-si KR
MEMORY DEVICE AND OPERATION METHOD THEREOF
This abstract first appeared for US patent application 20250022504 titled 'MEMORY DEVICE AND OPERATION METHOD THEREOF
Original Abstract Submitted
a memory device may include a first data line driver circuit that generates a first reference voltage set based on a first code and a second code associated with a first data line, and determines bit values of the first input data received through the first data line, based on the first reference voltage set. a second data line driver circuit may similarly generate a second reference voltage set. the reference voltages may have levels based on a decision feedback equalization (dfe) technique to reduce bit errors otherwise caused by inter symbol interference.