Samsung electronics co., ltd. (20250015100). IMAGE SENSOR
IMAGE SENSOR
Organization Name
Inventor(s)
IMAGE SENSOR
This abstract first appeared for US patent application 20250015100 titled 'IMAGE SENSOR
Original Abstract Submitted
an image sensor includes a photodiode disposed in a substrate and including an n-type impurity region, wherein the n-type impurity region is doped with n-type impurities, a transfer gate (tg) structure partially buried in the substrate and disposed on the n-type impurity region, a recess disposed at an upper surface of the substrate and being spaced apart from the tg structure, a floating diffusion (fd) region disposed under the recess and doped with n-type impurities, and an impurity region disposed at a portion of the substrate between the tg structure and the recess and doped with p-type impurities. an upper surface of the fd region is lower than an upper surface of the impurity region.