Samsung electronics co., ltd. (20250006830). SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE

Organization Name

samsung electronics co., ltd.

Inventor(s)

Jongryeol Yoo of Suwon-si KR

SEMICONDUCTOR DEVICE

This abstract first appeared for US patent application 20250006830 titled 'SEMICONDUCTOR DEVICE

Original Abstract Submitted

a semiconductor device includes an insulating substrate, a silicon layer on the insulating substrate, a dopant layer on the silicon layer, a buried spacer on a side surface of the dopant layer, a channel pattern on the dopant layer, the channel pattern comprising a plurality of semiconductor patterns vertically stacked and spaced apart from each other, a source/drain pattern on the buried spacer, the source/drain pattern connected to the channel pattern, a gate electrode on the channel pattern, the gate electrode comprising a plurality of inner electrodes between the semiconductor patterns, respectively, a lower power interconnection line in a lower portion of the insulating substrate, and a backside contact extending into the insulating substrate and the silicon layer to electrically connect the lower power interconnection line to the source/drain pattern. a side surface of the backside contact is in contact with the silicon layer and the buried spacer.