Samsung electronics co., ltd. (20250006770). COMPLEMENTARY METAL-OXIDE-SEMICONDUCTOR IMAGE SENSING DEVICES
COMPLEMENTARY METAL-OXIDE-SEMICONDUCTOR IMAGE SENSING DEVICES
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COMPLEMENTARY METAL-OXIDE-SEMICONDUCTOR IMAGE SENSING DEVICES
This abstract first appeared for US patent application 20250006770 titled 'COMPLEMENTARY METAL-OXIDE-SEMICONDUCTOR IMAGE SENSING DEVICES
Original Abstract Submitted
a dual vertical transfer gate, a transistor including the same, and a cmos image sensing device including the same. in some embodiments, a gate of the dual vertical transfer transistor may include a pair of poles, which are extended to an n-type region of a photodiode, and a connecting portion, which connects the paired poles to each other. a first insulating pattern may be provided between the poles and on the substrate.