Samsung electronics co., ltd. (20250006759). NON-SCATTERING NANOSTRUCTURES OF SILICON PIXEL IMAGE SENSORS
NON-SCATTERING NANOSTRUCTURES OF SILICON PIXEL IMAGE SENSORS
Organization Name
Inventor(s)
Radwanul Hasan Siddique of Monrovia CA US
Yibing Michelle Wang of Temple City CA US
Tze-Ching Fung of Diamond Bar CA US
NON-SCATTERING NANOSTRUCTURES OF SILICON PIXEL IMAGE SENSORS
This abstract first appeared for US patent application 20250006759 titled 'NON-SCATTERING NANOSTRUCTURES OF SILICON PIXEL IMAGE SENSORS
Original Abstract Submitted
provided are systems, methods, and apparatuses for non-scattering nanostructures of silicon pixel image sensors. in one or more examples, the systems, devices, and methods include forming a metal layer on a substrate layer of the pixel, the metal layer to reflect electromagnetic radiation incident on the pixel; forming a photodetector on a silicon layer of the pixel, the photodetector to generate photoelectrons based on the electromagnetic radiation; and forming a passivation layer over the silicon layer, the passivation layer including a thin film dielectric. in one or more examples, the systems, devices, and methods include forming a nanostructure on the passivation layer, the nanostructure to allow the electromagnetic radiation to pass through the nanostructure and steer the electromagnetic radiation linearly towards the photodetector, and forming a microlens on the nanostructure, the microlens including at least one of a flat coat layer or a curved lensing layer.