Samsung electronics co., ltd. (20250006594). SEMICONDUCTOR DEVICE
SEMICONDUCTOR DEVICE
Organization Name
Inventor(s)
JEONG HOON Ahn of Seongnam-si KR
SEMICONDUCTOR DEVICE
This abstract first appeared for US patent application 20250006594 titled 'SEMICONDUCTOR DEVICE
Original Abstract Submitted
a semiconductor device includes a substrate provided with an integrated circuit and a contact, an interlayer dielectric layer covering the integrated circuit and the contact, a through electrode penetrating the substrate and the interlayer dielectric layer, a first intermetal dielectric layer on the interlayer dielectric layer, and first and second wiring patterns in the first intermetal dielectric layer. the first wiring pattern includes a first conductive pattern on the through electrode, and a first via penetrating the first intermetal dielectric layer and connecting the first conductive pattern to the through electrode. the second wiring pattern includes a second conductive pattern on the contact, and a second via penetrating the first intermetal dielectric layer and connecting the second conductive pattern to the contact. a first width in a first direction of the first via is greater than a second width in the first direction of the second via.