Samsung electronics co., ltd. (20240431098). SEMICONDUCTOR DEVICE INCLUDING PERIPHERAL INSULATING STRUCTURE
SEMICONDUCTOR DEVICE INCLUDING PERIPHERAL INSULATING STRUCTURE
Organization Name
Inventor(s)
Seungyoon Song of Suwon-si (KR)
SEMICONDUCTOR DEVICE INCLUDING PERIPHERAL INSULATING STRUCTURE
This abstract first appeared for US patent application 20240431098 titled 'SEMICONDUCTOR DEVICE INCLUDING PERIPHERAL INSULATING STRUCTURE
Original Abstract Submitted
a semiconductor device includes bitlines on a cell region of a substrate; a contact plug between the bitlines; a landing pad on the contact plug; a peripheral gate on a peripheral circuit region of the substrate; a lower interlayer insulating layer covering a side surface of the peripheral gate; a peripheral contact plug penetrating through the lower interlayer insulating layer; peripheral interconnection layers on the lower interlayer insulating layer and the peripheral contact plug; and peripheral insulating structures passing between the peripheral interconnection layers, wherein the peripheral insulating structures include a first peripheral insulating structure partially penetrating through the lower interlayer insulating layer, and wherein the first peripheral insulating structure includes a first peripheral insulating layer, a second peripheral insulating layer on the first peripheral insulating layer and passing between the peripheral interconnection layers, and a mixture layer between the lower interlayer insulating layer and the first peripheral insulating layer.