Samsung electronics co., ltd. (20240421190). SEMICONDUCTOR DEVICES
SEMICONDUCTOR DEVICES
Organization Name
Inventor(s)
Seong Heum Choi of Suwon-si (KR)
Gi Woong Shim of Suwon-si (KR)
Hyo Seok Choi of Suwon-si (KR)
SEMICONDUCTOR DEVICES
This abstract first appeared for US patent application 20240421190 titled 'SEMICONDUCTOR DEVICES
Original Abstract Submitted
a semiconductor device may include a substrate, an active pattern extending in a first horizontal direction on the substrate, a gate electrode extending in a second horizontal direction different from the first horizontal direction on the active pattern, a source/drain region on at least a first side of the gate electrode on the active pattern, and a source/drain contact connected to the source/drain region on the first side of the gate electrode. the source/drain contact may include first, second, and third layers which are sequentially stacked, the first to third layers including the same metal, with each layer having a respective crystal orientation. the source/drain contact may include a first grain boundary at an interface between the first layer and the second layer, and a second grain boundary at an interface between the second layer and the third layer.
