Samsung electronics co., ltd. (20240413631). DEVICE FOR ELECTROSTATIC DISCHARGE PROTECTION USING SILICON-CONTROLLED RECTIFIER
DEVICE FOR ELECTROSTATIC DISCHARGE PROTECTION USING SILICON-CONTROLLED RECTIFIER
Organization Name
Inventor(s)
Jooyoung Song of Suwon-si (KR)
DEVICE FOR ELECTROSTATIC DISCHARGE PROTECTION USING SILICON-CONTROLLED RECTIFIER
This abstract first appeared for US patent application 20240413631 titled 'DEVICE FOR ELECTROSTATIC DISCHARGE PROTECTION USING SILICON-CONTROLLED RECTIFIER
Original Abstract Submitted
a device includes: a first silicon-controlled rectifier comprising a first pnp bipolar junction transistor (bjt) and a first npn bjt in which bases and collectors are cross-coupled; and a field effect transistor (fet) configured to, based on an electrostatic discharge occurring between an anode of the first silicon-controlled rectifier and a cathode of the first silicon-controlled rectifier, trigger the first silicon-controlled rectifier. an emitter of the first pnp bjt corresponds to a plurality of first p+ regions being spaced apart from each other in a first direction. the fet is connected to the first silicon-controlled rectifier through at least one first n+ region disposed between the plurality of first p+ regions.
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