Samsung electronics co., ltd. (20240404863). METHOD FOR FABRICATING SEMICONDUCTOR DEVICE
METHOD FOR FABRICATING SEMICONDUCTOR DEVICE
Organization Name
Inventor(s)
Kwang Yong Yu of Suwon-si (KR)
Woo Jeong Shin of Suwon-si (KR)
Chang Min Park of Suwon-si (KR)
METHOD FOR FABRICATING SEMICONDUCTOR DEVICE
This abstract first appeared for US patent application 20240404863 titled 'METHOD FOR FABRICATING SEMICONDUCTOR DEVICE
Original Abstract Submitted
a method for fabricating a semiconductor device may include forming a first substrate including a first surface and a second surface, which may be opposite each other, forming a first semiconductor element on the first surface, adhering the first substrate onto a second substrate so that an upper surface of the second substrate faces the first surface of the first substrate, removing an edge region of the first substrate, forming a passivation layer surrounding first sides of the first substrate, and forming a second semiconductor element on the second surface of the first substrate. the passivation layer may not be formed on the second surface of the first substrate.